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NTD4909N
Power MOSFET
30 V, 41 A, Single N ? Channel, DPAK/IPAK
Features
? Low R DS(on) to Minimize Conduction Losses
? Low Capacitance to Minimize Driver Losses
? Optimized Gate Charge to Minimize Switching Losses
? These are Pb ? Free Devices
Applications
? CPU Power Delivery
? DC ? DC Converters
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
V (BR)DSS
30 V
http://onsemi.com
R DS(on) MAX
8.0 m W @ 10 V
12 m W @ 4.5 V
D
I D MAX
41 A
Parameter
Symbol
Value
Unit
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
V DSS
V GS
30
" 20
V
V
G
N ? Channel
Continuous Drain
Current (R q JA )
(Note 1)
T A = 25 ° C
T A = 100 ° C
I D
12.1
8.6
A
S
Power Dissipation
(R q JA ) (Note 1)
T A = 25 ° C
P D
2.6
W
4
4
1 2 1
2 3
3
3
4
4
1
2
3
Source Gate Drain Source
1
2
3
Continuous Drain T A = 25 ° C
Current (R q JA )
(Note 2) Steady T A = 100 ° C
State
Power Dissipation T A = 25 ° C
(R q JA ) (Note 2)
Continuous Drain T C = 25 ° C
Current (R q JC )
(Note 1) T C = 100 ° C
Power Dissipation T C = 25 ° C
(R q JC ) (Note 1)
Pulsed Drain Current  t p =10 m s T A = 25 ° C
Current Limited by Package T A = 25 ° C
Operating Junction and Storage Temperature
Source Current (Body Diode)
Drain to Source dV/dt
Single Pulse Drain ? to ? Source Avalanche
Energy (T J = 25 ° C, V DD = 50 V, V GS = 10 V,
L = 0.1 mH, I L(pk) = 24 A, R G = 25 W )
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 s)
I D
P D
I D
P D
I DM
I DmaxPkg
T J , T stg
I S
dV/dt
E AS
T L
8.8
6.2
1.37
41
29
29.4
167
60
? 55 to
175
27
7.0
28
260
A
W
A
W
A
A
° C
A
V/ns
mJ
° C
4
1
2
CASE 369AA CASE 369AD CASE 369D
DPAK IPAK IPAK
(Bent Lead) (Straight Lead) (Straight Lead
STYLE 2 DPAK)
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
Drain          Drain
2
1 Drain 3
Gate
Gate Drain Source
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface ? mounted on FR4 board using 1 in sq pad size, 1 oz Cu.
2. Surface ? mounted on FR4 board using the minimum recommended pad size.
Y
WW
4909N
G
= Year
= Work Week
= Device Code
= Pb ? Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
? Semiconductor Components Industries, LLC, 2010
June, 2010 ? Rev. 2
1
Publication Order Number:
NTD4909N/D
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相关代理商/技术参数
NTD4909NT4H 制造商:Rochester Electronics LLC 功能描述: 制造商:ON Semiconductor 功能描述:
NTD4910N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 37 A, Single N−Channel, DPAK/IPAK
NTD4910N-1G 功能描述:MOSFET NFET DPAK 30V 37A 9.0MO RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD4910N-35G 功能描述:MOSFET NFET DPAK 30V 37A 9.0MO RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD4910NT4G 功能描述:MOSFET NFET DPAK 30V 37A 9.0MO RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD4913N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 32 A, Single N−Channel, DPAK/IPAK
NTD4913N-1G 功能描述:MOSFET NFET DPAK 30V 32A 10.5MO RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD4913N-35G 功能描述:MOSFET NFET DPAK 30V 32A 10.5MO RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube